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Magnetic Continuous Film Sandwich Array

IP.com Disclosure Number: IPCOM000097948D
Original Publication Date: 1961-Oct-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 30K

Publishing Venue

IBM

Related People

Pugh, EW: AUTHOR [+2]

Abstract

This structure avoids demagnetizing field effects, associated with individual thin magnetic film bits, caused by the film edges.

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Magnetic Continuous Film Sandwich Array

This structure avoids demagnetizing field effects, associated with individual thin magnetic film bits, caused by the film edges.

The memory array sandwiches drive lines 10 and 12 and a sense line (not shown) between two continuous thin film sheets of permalloy 14 and 16. Each has an easy axis of magnetization 18 and 20, respectively. A binary storage cell is then defined by areas of both sheets 14 and 16, common to the cross-over area of lines 10 and 12.

With a binary 0 stored in the cell, the only demagnetizing field is at the far edges of sheets 10 and 12 where proximity of adjacent N and S poles greatly reduces this effect (lower left). With a binary 1 stored, double N and S poles are set up at the edges of the area defining the storage cell in each sheet 10 and 12. The double N and S poles greatly reduce the demagnetizing field due to the proximity of opposite poles on the adjacent sheet.

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