Browse Prior Art Database

Power Supply For Low Temperature Devices

IP.com Disclosure Number: IPCOM000097955D
Original Publication Date: 1961-Oct-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 32K

Publishing Venue

IBM

Related People

Esaki, L: AUTHOR

Abstract

Certain active devices, such as diodes formed of indium antimonide and indium arsenide, etc., require very low temperatures for effective operation.

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Power Supply For Low Temperature Devices

Certain active devices, such as diodes formed of indium antimonide and indium arsenide, etc., require very low temperatures for effective operation.

The arrangement employs the temperature difference between room temperature and the low temperature environment required for an active device. This provides a low impedance and a low voltage power source for the device.

A thermoelectric device, comprising a positive thermoelement 1 and a negative thermoelement 2 with an interposed junction 3, is disposed so that the junction 3 is at room temperature. The opposite end of the thermoelectric device, including the terminals 4 and 5, is situated within the low temperature environment used for the active device. The generated thermoelectric voltage, appearing across terminals 4 and 5, is applied to the active device.

A supply voltage that is satisfactory for the operation of certain semiconductor diodes is approximately 0.3 volts, which is readily obtainable from a thermoelectric device. Other values of supply voltage are obtained if other types of low temperature devices, such as cryotrons, transistors, etc., are supplied.

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