Browse Prior Art Database

High-Speed Transmission Line Memory

IP.com Disclosure Number: IPCOM000098010D
Original Publication Date: 1961-Nov-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 33K

Publishing Venue

IBM

Related People

Freiser, M: AUTHOR

Abstract

The non-destructive readout memory comprises a transmission line, formed from a pair of conductive strips 1 and 3, and an interposed layer of non-conductive ferromagnetic material 5.

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High-Speed Transmission Line Memory

The non-destructive readout memory comprises a transmission line, formed from a pair of conductive strips 1 and 3, and an interposed layer of non- conductive ferromagnetic material 5.

Binary information is stored by varying the remanent condition of discrete sections of layer 5. Binary information and a single write pulse are oppositely directed as half-select pulses by generators 7 and 9, respectively, along strips 1 and 3. Where such pulses overlap, the permeability of discrete sections of material 5 is varied. Magnetic heads, and also auxiliary coils, can be used to vary permeability.

To read out information, a single read pulse is directed along strips 1 and 3 by generator 9. Partial reflections of the read pulse, caused by discontinuities in permeability along material 5, are received by detector 11 and timed. The detection or absence of reflected pulses at predetermined time intervals, corresponding to information slots, indicate the storage or non-storage, respectively, of binary bits.

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