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Process for Adhering CdSe Layers to Silica Substrates

IP.com Disclosure Number: IPCOM000098026D
Original Publication Date: 1961-Dec-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Reisman, A: AUTHOR [+2]

Abstract

This process improves the adhesion of sintered CdSe layers to smooth silica based substrates.

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Process for Adhering CdSe Layers to Silica Substrates

This process improves the adhesion of sintered CdSe layers to smooth silica based substrates.

CdSe-CdCl(2) fluxed sintered layers fired in inert gases such as H(2), N(2) or He do not adhere to smooth silica substrates. High temperature ceramic glues are formed by heating the system CdSe-CdCl(2) in a 1% oxygen atmosphere at, or above, the eutectic temperature of the system determined as 523 degrees C. The resulting layers adhere firmly to the substrates.

CdSe in the presence of oxygen above the eutectic temperatures forms cadmium oxide. This, in turn, reacts with SiO(2) (of the substrate) to yield CdO(x) * SiO(2y) * or CdO(x) * MgO(x) * SiO(2y) glues, effecting bonding of the sintered layers to glass substrates, thus improving the adhesion of the layer to the base.

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