Browse Prior Art Database

Semiconductor Device Fabrication

IP.com Disclosure Number: IPCOM000098055D
Original Publication Date: 1961-Dec-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 22K

Publishing Venue

IBM

Related People

Gunn, JB: AUTHOR

Abstract

The technique is for making semiconductor devices having junctions 4 of extremely small area.

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Semiconductor Device Fabrication

The technique is for making semiconductor devices having junctions 4 of extremely small area.

A layer 2 of gallium arsenide is deposited by evaporation onto a germanium semiconductor body 3. A contact wire 7 is fixed to it by a dot of solder 6. Either an ohmic contact is made or an alloy junction with the deposited layer is formed. An etchant, e. g., CP(4), which does not affect the Ge semiconductor body 3 and the dot of solder 6, attacks the deposited layer 2 until only an extremely small junction 4 is left.

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