Browse Prior Art Database

Selective Mask Deformation

IP.com Disclosure Number: IPCOM000098066D
Original Publication Date: 1961-Dec-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 32K

Publishing Venue

IBM

Related People

Ames, I: AUTHOR

Abstract

The technique is useful in the fabrication of multilayer thin film electrical circuits by vacuum deposition of selected materials through various pattern masks.

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Selective Mask Deformation

The technique is useful in the fabrication of multilayer thin film electrical circuits by vacuum deposition of selected materials through various pattern masks.

In general, to obtain the required thin film geometry, several regions of the mask such as 1 and 2 exhibit a lack of mechanical rigidity, as shown. Thereafter, during an evaporation operation, these regions bend, as a result of the radiant heat supplied by the evaporation source, damaging underlying circuitry previously deposited.

By forming a number of protrusions in these regions of the mask, as indicated by 3 through 9, the location of which are selected such that there is no previously deposited circuitry beneath any of the protrusions, the substrate damage resulting from mask bending is limited to electrically unimportant areas defined by the protrusions. The small figure represents a cross-sectional view of protrusion 7 having a depth of approximately 3 mils and a diameter of 10 mils.

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