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Browse Prior Art Database

Preparation Of Small Oriented Crystals By Vapor Deposition

IP.com Disclosure Number: IPCOM000098136D
Original Publication Date: 1960-Feb-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 36K

Publishing Venue

IBM

Related People

McDade, PJ: AUTHOR

Abstract

A vapor deposition of germanium in a hydrogen environment under suitable conditions gives rise to triangular crystals useful in the construction of high frequency transistors. The crystal produced is of value because, in addition to its extremely small dimensions, it has (111) single crystal orientation, has parallel and optically flat faces, is reproducible, and the surface and edges of the crystal are not disturbed from lapping and cutting.

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Preparation Of Small Oriented Crystals By Vapor Deposition

A vapor deposition of germanium in a hydrogen environment under suitable conditions gives rise to triangular crystals useful in the construction of high frequency transistors. The crystal produced is of value because, in addition to its extremely small dimensions, it has (111) single crystal orientation, has parallel and optically flat faces, is reproducible, and the surface and edges of the crystal are not disturbed from lapping and cutting.

In the deposition, a quartz tube 25 mm. in diameter is backfilled with 200 mm. H(g) of O(2) at 10/-6/ mm. H(g) vacuum. It is closed 5 cm. from a germanium wafer using a quartz plug. The tube is heated for 16 hours in a furnace at 845 degrees C, the crystals grow from their apices on a polycrystalline deposit around the center and edge of the plug. In addition, the best deposits of the triangular crystals are found on a second deposition operation after the same germanium source, now diffused with O(2), is backfilled with 200 mm. H(g) of H(2) at 10-6 mm. H(g) vacuum and sealed off with a quartz plug, then heated for 66 hours at 845 degrees C.

The altitudes of the triangular crystals range from 10-60 mils and the thickness from < 0.1 to 0.2 mils.

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