Browse Prior Art Database

Thin Film Memory

IP.com Disclosure Number: IPCOM000098149D
Original Publication Date: 1960-Feb-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 27K

Publishing Venue

IBM

Related People

Ford, NC: AUTHOR

Abstract

A thin film memory utilizing rotational switching includes a thin magnetic film element 1, exhibiting rectangular hysteresis loop characteristics, mounted on a substrate 2 and having half select drive windings X and Y and a sense winding 3.

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Thin Film Memory

A thin film memory utilizing rotational switching includes a thin magnetic film element 1, exhibiting rectangular hysteresis loop characteristics, mounted on a substrate 2 and having half select drive windings X and Y and a sense winding 3.

The element 1 is deposited on the substrate with an easy axis of magnetization in the direction indicated by the arrows. The X and Y windings are arranged at a slight angle from perpendicular to the easy axis to assure that the entire magnetic vector will rotate in the same direction to induce an output signal characteristic of a 1 or 0 state of the element 1.

The sense winding is substantially perpendicular to the drive windings to minimize noise pickup.

The element 1 should have a characteristic such that the threshold field required to switch by wall motion be significantly greater than one half of the field required to induce rotational switching. Under these conditions rotational switching occurs when both drive windings are energized. No switching takes place when only one drive winding is energized.

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