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Storage Element Using The Avalanche Phenomenon

IP.com Disclosure Number: IPCOM000098200D
Original Publication Date: 1960-Apr-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 22K

Publishing Venue

IBM

Related People

Conley, JW: AUTHOR

Abstract

The normal avalanche breakdown characteristic of a transistor provides a negative resistance region which suggests its possible use as a bistable element. However, the upper portion of the characteristic is nearly vertical, making it difficult to achieve reliable operation.

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Storage Element Using The Avalanche Phenomenon

The normal avalanche breakdown characteristic of a transistor provides a negative resistance region which suggests its possible use as a bistable element. However, the upper portion of the characteristic is nearly vertical, making it difficult to achieve reliable operation.

If the transistor is arranged to have a Beta (current gain) versus I (current) characteristic having a sharp maximum as shown, an avalanche characteristic is obtained such as is shown at the right. This characteristic provides two easily attainable stable points and the transistor is thus usable as a two terminal storage device. This effect can be achieved in various ways; for example, a silicon transistor with a low emitter efficiency provides the required Beta vs I characteristic.

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