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Amplification of Electromagnetic Energy

IP.com Disclosure Number: IPCOM000098211D
Original Publication Date: 1960-Apr-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 40K

Publishing Venue

IBM

Related People

Mattis, DC: AUTHOR [+2]

Abstract

Amplification in the high radio frequency and infrared portions of the electromagnetic spectrum is obtained by utilizing mass differences of carriers in semiconductors and inversion of one of the populations. This effect makes use of two different cyclotron resonance states corresponding to the two different mass particles.

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Amplification of Electromagnetic Energy

Amplification in the high radio frequency and infrared portions of the electromagnetic spectrum is obtained by utilizing mass differences of carriers in semiconductors and inversion of one of the populations. This effect makes use of two different cyclotron resonance states corresponding to the two different mass particles.

The microwave pump frequency V(2) is determined by the microwave absorption characteristic of the active semiconductor element. A semiconductor having at least two different microwave resonances is placed in a doubly resonant cavity at the position of maximum electric field. The microwave source at the pump frequency V(2) increases the energy of the small concentration of thermally produced carriers until their energy is sufficient to ionize other carriers of either type. This ionization, which produces a non-thermal equilibrium distribution of carriers with suitably chosen parameters, is made to produce an inverted population of one of these types. The non-equilibrium produces a net emission of radiation at the signal frequency and, therefore, amplification is possible.

The apparatus for producing a broad-band microwave amplifier according to this method comprises the microwave resonant cavity 1 containing semiconductor material 2. The material 2 is positioned in the cavity so that it is amenable to cyclotron resonance excitation, i.e., at the position of maximum microwave electric field. An external D. C. magnetic field H of about 1000-5000 oersteds is applied in a direction per...