Browse Prior Art Database

Parametron Thin Film Storage

IP.com Disclosure Number: IPCOM000098226D
Original Publication Date: 1960-Apr-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 52K

Publishing Venue

IBM

Related People

Proebster, WE: AUTHOR

Abstract

In a thin film storage matrix, binary information is represented in each of the thin film elements by the orientation of the magnetization in the easy direction. To enable direct connection with parametron switching elements, the dual frequency mode of operation is employed.

This text was extracted from a PDF file.
At least one non-text object (such as an image or picture) has been suppressed.
This is the abbreviated version, containing approximately 65% of the total text.

Page 1 of 2

Parametron Thin Film Storage

In a thin film storage matrix, binary information is represented in each of the thin film elements by the orientation of the magnetization in the easy direction. To enable direct connection with parametron switching elements, the dual frequency mode of operation is employed.

Assuming that in a parametron computer the binary digits 1 are represented by phase zero and 0 by phase pi of sine waves of the frequency W, two different write waveforms with a characteristic amplitude discrimination are obtained by superimposing sine waves of the frequency W/2. Write signal 1. 2*cos W/ht + cos Wt Write signal 0. 2cos W/ht + cos (Wt + pi)

For writing information into a thin film storage element, a write control pulse is applied to the respective drive conductor which produces a magnetic control field H (being kept just below the anisotropy coercive force H(k)) which deflects the magnetization of the associated storage elements towards the hard direction. The write signal is simultaneously applied to the respective read write conductor. The amplitudes of the magnetic fields derived from the write signal and control pulse, respectively, are chosen such that after one or several periods of the write signal, the major portion of the magnetization of the thin film element has been switched into the direction of maximum signal field amplitude. After termination of the write control pulse, the magnetization switches back into the predetermined orientati...