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P-N Junction Position Determination

IP.com Disclosure Number: IPCOM000098296D
Original Publication Date: 1960-Jul-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 25K

Publishing Venue

IBM

Related People

Anderson, RL: AUTHOR [+2]

Abstract

A method is provided for locating a P-N junction which consists of illuminating the material 10 in which the junction 11 is located, by a radiant energy source 12 to lower the potential barrier or to effectively bias the junction in the forward direction. A broad area contact 13 is made at one side of the junction and a probe 14 is made to traverse the region of the junction. The voltage between the probe and the broad area contact, measured by meter 15, is a function of position. The electrochemical potential profile is plotted on an X Y recorder.

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P-N Junction Position Determination

A method is provided for locating a P-N junction which consists of illuminating the material 10 in which the junction 11 is located, by a radiant energy source 12 to lower the potential barrier or to effectively bias the junction in the forward direction. A broad area contact 13 is made at one side of the junction and a probe 14 is made to traverse the region of the junction. The voltage between the probe and the broad area contact, measured by meter 15, is a function of position. The electrochemical potential profile is plotted on an X Y recorder.

For a linearly graded junction, the junction position is in the center of the transition region. Most junctions can be made to be essentially linearly graded by biasing sufficiently in the forward direction. To achieve this, the intensity of illumination is increased. Measurements accurate to ten micro inches can be made.

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