Browse Prior Art Database

Semiconductor Device

IP.com Disclosure Number: IPCOM000098297D
Original Publication Date: 1960-Jul-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 20K

Publishing Venue

IBM

Related People

Anderson, RL: AUTHOR

Abstract

A technique has been developed for fabricating P N junctions 10 and 11 and an opposite conductivity type region 12 in a gallium arsenide substrate 13 by epitaxially depositing germanium 14 of the same conductivity type. This provides a wide PN junction and is a highly efficient radiant energy responsive device.

This text was extracted from a PDF file.
At least one non-text object (such as an image or picture) has been suppressed.
This is the abbreviated version, containing approximately 100% of the total text.

Page 1 of 2

Semiconductor Device

A technique has been developed for fabricating P N junctions 10 and 11 and an opposite conductivity type region 12 in a gallium arsenide substrate 13 by epitaxially depositing germanium 14 of the same conductivity type. This provides a wide PN junction and is a highly efficient radiant energy responsive device.

The region 14 of a P type, relatively low energy gap, semiconductor material is epitaxially added to the region 13 of N type of relatively high resistivity, intermetallic compound type, wide energy gap, semiconductor material. When the region 14 is added, the conductivity type of the N type, wide energy gap, intermetallic compound type region 13 changes. The intermetallic compound near the interface of the original region 13 changes from N extrinsic conductivity type to P intrinsic conductivity type, so that the wide PN junction 10 is formed.

The wide junction 10 joins the region 12 of opposite conductivity type. Region 12 is of the same wide energy gap, intermetallic compound type semiconductor material as region 13.

In the event that conductivity type determining impurities are added to the low energy gap semiconductor material 14, a second P N junction 11 may be formed. Alloyed ohmic contacts 15 and 16 are made to regions 13 and 14.

1

Page 2 of 2

2

[This page contains 1 picture or other non-text object]