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Selection of Memory Elements

IP.com Disclosure Number: IPCOM000098305D
Original Publication Date: 1960-Jul-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 20K

Publishing Venue

IBM

Related People

Shevel, WL: AUTHOR [+2]

Abstract

Selection of magnetic bistable memory elements is effected by using current pulses in such a way as to nullify the necessity of having an exact, or near exact, time coincidence of the selection pulses.

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Selection of Memory Elements

Selection of magnetic bistable memory elements is effected by using current pulses in such a way as to nullify the necessity of having an exact, or near exact, time coincidence of the selection pulses.

The pulses are applied to the X and Y selection lines of a typical memory matrix and are such that the occurrence of one and only one does not result in switching of a core. Application of a first pulse on the X selection line, as shown, which is of small amplitude and of a duration T(1) and application of a second pulse on the Y selection line having a relatively large amplitude and duration T(2), where T(1) > T(2), allows occurrence of the pulse on the Y selection line anywhere within the time interval T(3), where T(3) = T(1) + 2T(2). Thus, the variation in pulse occurrence caused by transmission line delays within the memory may be offset by implementation of the proposed method.

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