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Esaki Diode Memory

IP.com Disclosure Number: IPCOM000098351D
Original Publication Date: 1960-Aug-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 42K

Publishing Venue

IBM

Related People

Bauer, EW: AUTHOR [+3]

Abstract

Esaki diodes exhibiting the above V-I characteristic are employed in a memory matrix. The load lines A, B, C and D, corresponding to fixed current inputs, represent the different operating conditions of the diode in the memory.

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Esaki Diode Memory

Esaki diodes exhibiting the above V-I characteristic are employed in a memory matrix. The load lines A, B, C and D, corresponding to fixed current inputs, represent the different operating conditions of the diode in the memory.

Under quiescent conditions, the diode is at one of the two stable operating points indicated by the two intersections in the positive resistance regions of the curve and hold current line. In the 0 low voltage state the diode's characteristic is fairly linear. In the 1 high voltage state the diode's characteristic is non linear.

The hold current is modulated with an R. F. signal to develop a voltage which contains virtually no harmonics of the R. F. signal with the diode in the 0 state, but is rich in harmonics with the diode in the 1 state. By use of a selective filter and/or amplifier, the harmonics of the R. F. signal may be used to sense the state of the diode. A coincident readout is obtained by modulating the hold current with two R. F. signals and sensing the sum or difference frequencies. Virtually no mixing occurs with the diode in the 0 state and efficient mixing occurs with the diode in the 1 state.

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