Browse Prior Art Database

Semiconductor Fabrication

IP.com Disclosure Number: IPCOM000098395D
Original Publication Date: 1960-Sep-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 33K

Publishing Venue

IBM

Related People

Marinace, JC: AUTHOR

Abstract

A plurality of semiconductor device s exhibiting identical performance characteristics are fabricated simultaneously in a single processing operation using an apertured fixture.

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Semiconductor Fabrication

A plurality of semiconductor device s exhibiting identical performance characteristics are fabricated simultaneously in a single processing operation using an apertured fixture.

An apertured plate 10 having low electrical conductivity and low chemical activity, such as glass, is placed on a substrate 11, for example, monocrystalline germanium.

Germanium material is deposited from a gas 12 and grows epitaxially on the substrate 11 in the form of elements 13 within the apertures 14.

PN junctions are formed in the elements 13 by changing the concentration of conductivity type determining impurities in the gas 12. Control of the concentration also determines whether the junction is formed at the intersurface between substrate 11 and elements 13 or at a point within elements 13.

The semiconductor material does not deposit to an appreciable degree on the fixture 10. The fixture 10 may be removed as shown at the right or may be retained, with proper shaping of the apertures 14, as shown at the left. If retained, the substrate 11 may be removed, leaving the elements 13 supported solely in the fixture 10. Suitable connection 15, 16 may be made to the elements
13.

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