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Pressure Dependence Of Vapor Growth Processes For Germanium Crystals

IP.com Disclosure Number: IPCOM000098396D
Original Publication Date: 1960-Sep-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 26K

Publishing Venue

IBM

Related People

Silvey, G: AUTHOR [+3]

Abstract

During the initial stage of the germanium vapor growth process, the following reaction occurs: (1) Ge+I(2)---->GeI(2) in a closed cycle system, the epitaxial growth of germanium depends on(2) 2GeI(2) <----------> Ge + GeI(4) In a dynamic flow system, the above reaction proceeds only to the right.

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Pressure Dependence Of Vapor Growth Processes For Germanium Crystals

During the initial stage of the germanium vapor growth process, the following reaction occurs: (1) Ge+I(2)---->GeI(2) in a closed cycle system, the epitaxial growth of germanium depends

on(2) 2GeI(2) <----------> Ge + GeI(4) In a dynamic flow
system, the above reaction proceeds only to the right.

Growth rates may depend on (a) source reaction mechanism, (b) decomposition reaction mechanism and (c) gas phase material transport rate. It has been observed that the crystal growth rate has an approximate linear dependence upon initial iodine pressure. This pressure is, in turn, proportional to reagent concentrations in the closed cycle system when no condensed iodide phases exist.

A typical growth rate is demonstrated by the following experimental conditions and results: Time at indicated temperatures - 1 hour, 15 minutes

Iodine used = 1.26 grams

Volume of quartz vessel = 40.69 cm/3/ initial pressure

of I(2) = 10atm.

Averaged growth rate - 700 microns/hr.

Maximum growth rate - 940 microns/hr.

Epitaxial growth occurrence - 211 surfaces

The linear effect of initial iodine pressure on growth rate has been demonstrated at a variety of pressures below 10 atmospheres in a closed cycle system. Comparable results are expected in an open tube flow system.

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