Browse Prior Art Database

Multiple Junction Semiconductor

IP.com Disclosure Number: IPCOM000098397D
Original Publication Date: 1960-Sep-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 32K

Publishing Venue

IBM

Related People

Anderson, RL: AUTHOR [+2]

Abstract

This multiple junction semiconductor structure has alternate junctions which exhibit the tunneling phenomenon. The output characteristics of the individual diodes making up the multiple junction unit add up to give a composite output characteristic. This is unique and exhibits improved photosensitivity, more rapid switching, has a lower ohmic impedance and exhibits a low resistance to both A.C. and D.C.

This text was extracted from a PDF file.
At least one non-text object (such as an image or picture) has been suppressed.
This is the abbreviated version, containing approximately 53% of the total text.

Page 1 of 2

Multiple Junction Semiconductor

This multiple junction semiconductor structure has alternate junctions which exhibit the tunneling phenomenon. The output characteristics of the individual diodes making up the multiple junction unit add up to give a composite output characteristic. This is unique and exhibits improved photosensitivity, more rapid switching, has a lower ohmic impedance and exhibits a low resistance to both A.C. and D.C.

The eight zone device has P conductivity type zones 10A... 10D and N conductivity type zones 11A... 11D. The junctions 12A... 12D are of the Esaki or tunnel phenomenon type. Alternate junctions 13A... 13D are of the conventional type. Due to the extremely high impurity concentration, these serve as effective ohmic contacts joining the regions forming Esaki junctions. Ohmic external connections 14 and 15 are provided.

While only four Esaki diodes are shown, added diodes can be utilized to form the composite E-I characteristic curve desired. The E-I output characteristic is similar to that of several diodes in series but the series resistance of the diode is comparable to a single such diode. In the case of current flow in one direction, the Esaki junctions 12A... 12D act as a short circuit connecting the other diodes. This is because they are biased in the reverse direction while the conventional junctions are forward biased. Conversely, in the opposite direction of current flow, when the conventional junctions are reversely biased, the Esaki.junctions are forwardly biased and do not present a large impedance. no photo voltage. The o...