Browse Prior Art Database

Magnetic Memory Element

IP.com Disclosure Number: IPCOM000098490D
Original Publication Date: 1960-Nov-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 31K

Publishing Venue

IBM

Related People

Russell, LA: AUTHOR

Abstract

Switching circuits and storage matrices employing open flux path magnetic bistable elements are constructed in which unwanted electrical and magnetic field coupling between conductors coupling the elements is substantially eliminated.

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Magnetic Memory Element

Switching circuits and storage matrices employing open flux path magnetic bistable elements are constructed in which unwanted electrical and magnetic field coupling between conductors coupling the elements is substantially eliminated.

A magnetic film 10 exhibiting uni-axial anisotropy 11 has a first drive conductor 12, a second drive conductor 13 and an output conductor 14. Each of the conductors 12, 13 and 14 is connected at one end to a common terminal 15 and at the other end to individual terminals 16, 17 and 18, respectively. By energization of the terminals 16 and 17 with a balanced current input, a parallel field is applied to film 10. Electrical and magnetic coupling of the sense conductor 14 is eliminated when each of the conductors 12, 13 and 14 is symmetrically positioned with respect to one another.

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