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Non-destructive Read For Thin Film Storage Device

IP.com Disclosure Number: IPCOM000098493D
Original Publication Date: 1960-Nov-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 17K

Publishing Venue

IBM

Related People

Russell, LA: AUTHOR

Abstract

The device employs a plurality of anisotropic magnetic thin film elements, A, B and C, each exhibiting an easy axis of magnetization 10, 11 and 12, respectively. It may be utilized either as a ternary logical device or a binary storage device capable of being non-destructively read out.

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Non-destructive Read For Thin Film Storage Device

The device employs a plurality of anisotropic magnetic thin film elements, A, B and C, each exhibiting an easy axis of magnetization 10, 11 and 12, respectively. It may be utilized either as a ternary logical device or a binary storage device capable of being non-destructively read out.

If both A and C are magnetized in a similar direction, then a bias field is applied to B in a direction from right to left or from left to right. If the magnetization of A and C is in opposition, there is no net field applied in the horizontal direction to B.

With the magnetization of B initially in the downward direction, a field is applied to B in an upward direction parallel to II. This field is insufficient to cause reorientation of the magnetization of B. The application of this field to B does, however, in conjunction with the bias field applied to B by proper orientation of both A and C cause rotational switching of B to an opposite state. Depending upon the direction of the bias field applied to B, rotational switching is either clockwise or counter-clockwise.

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