Browse Prior Art Database

Tunnel Diode Memory Package

IP.com Disclosure Number: IPCOM000098516D
Original Publication Date: 1960-Dec-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 46K

Publishing Venue

IBM

Related People

Lawrence, WW: AUTHOR

Abstract

The structure is a memory cell package for use with a matrix composed of microstrip transmission line elements. The specific example comprises a tunnel diode as the memory element, but other devices may be incorporated in the package.

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Tunnel Diode Memory Package

The structure is a memory cell package for use with a matrix composed of microstrip transmission line elements. The specific example comprises a tunnel diode as the memory element, but other devices may be incorporated in the package.

The circuit consists of a tunnel diode and resistor R connected in series between the X and Y, or Word and Bit lines at each intersection of a matrix. The upper drawing shows the fabrication of such a matrix. The tunnel diode package comprises a cylindrical element inserted in holes at the intersections of the Word and Bit lines.

The microstrip matrix board is fabricated and then drilled. The cylindrical diode resistor plugs are inserted in the holes and soldered top and bottom to the Word and Bit lines. The end caps of the plugs close the holes in the lines. Defective elements are simply unsoldered and replaced and the flush mounting maintains the transmission line characteristic of the matrix.

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