Browse Prior Art Database

Double Negative Resistance Device

IP.com Disclosure Number: IPCOM000098608D
Original Publication Date: 1959-Jun-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 28K

Publishing Venue

IBM

Related People

Rutz, RF: AUTHOR

Abstract

This is a semiconductor device which has a double negative resistance characteristic illustrated at the left. The structure is depicted at the right with the characteristics appearing between the terminals 1 and 2.

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Double Negative Resistance Device

This is a semiconductor device which has a double negative resistance characteristic illustrated at the left. The structure is depicted at the right with the characteristics appearing between the terminals 1 and 2.

The device has two closely spaced ohmic alloy contacts 1 and 2 made to a graded resistivity region on an opposite conductivity type substrate. The characteristic is observed between the ohmic alloyed terminals and exhibits negative resistance in regions (a) and (b) of the curve.

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