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Isotropic Thin Film Memory Device

IP.com Disclosure Number: IPCOM000098614D
Original Publication Date: 1959-Jun-01
Included in the Prior Art Database: 2005-Mar-08
Document File: 2 page(s) / 24K

Publishing Venue

IBM

Related People

Eggenberger, JE: AUTHOR

Abstract

Magnetic thin films exhibiting anisotropic properties of magnetization are capable of being implemented in switching circuits and memory matrices somewhat similar to the usual bistable magnetic cores. Anisotropic thin films are generally limited to the storage and recognition of one bit of information such as a 0 or a 1 and any further designation of bits within a word must be stored in similar elements.

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Isotropic Thin Film Memory Device

Magnetic thin films exhibiting anisotropic properties of magnetization are capable of being implemented in switching circuits and memory matrices somewhat similar to the usual bistable magnetic cores. Anisotropic thin films are generally limited to the storage and recognition of one bit of information such as a 0 or a 1 and any further designation of bits within a word must be stored in similar elements.

By employing an isotropic magnetic thin film, multibit storage in one storage element is achieved. In the circuit, a circular isotropic thin film is shown having an X and a Y drive winding inductively linking the element. The X and Y drive lines are wound in quadrature to one another and are adapted to provide magnetic fields parallel to the plane of the element at an angular displacement of 90 degrees.Employing equal pulse magnitudes and pulse durations of either polarity to both the X and Y windings, coincident selection of four different states of magnetization is effected, having a multi-binary notation as is shown. The magnetization of such an element is reset to some datum position to read the stored information, with an output discrimination of both amplitude and polarity indicating the stored digits.

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