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Deep Diffusion of Antimony Into Germanium

IP.com Disclosure Number: IPCOM000098656D
Original Publication Date: 1959-Aug-01
Included in the Prior Art Database: 2005-Mar-08
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Ostapkovich, PL: AUTHOR

Abstract

To effect a deep diffusion of an N-type ski-n on a P-type germanium wafer, a thin film of antimony pentachloride is first sprayed on the wafer. The latter is then baked in air in an oven for about an hour. Thereafter, the wafer is inserted in an evacuated diffusion chamber for a period of time sufficient to complete the diffusion operation. During these steps, it appears that the antimony pentachloride is hydrolyzed to antimony pentaoxide and a portion of the latter is further reduced to yield antimony ions which dope the germanium and establish a smooth N-type skin on the wafer.

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Deep Diffusion of Antimony Into Germanium

To effect a deep diffusion of an N-type ski-n on a P-type germanium wafer, a thin film of antimony pentachloride is first sprayed on the wafer. The latter is then baked in air in an oven for about an hour. Thereafter, the wafer is inserted in an evacuated diffusion chamber for a period of time sufficient to complete the diffusion operation. During these steps, it appears that the antimony pentachloride is hydrolyzed to antimony pentaoxide and a portion of the latter is further reduced to yield antimony ions which dope the germanium and establish a smooth N-type skin on the wafer.

The process is relatively easy to control and assures deep N-type skins without creating surface disturbances or irregularities. It is useful in the manufacture of PNP transistors for translating heavier currents.

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