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Alloy Diffusion NPN Drift Transistor

IP.com Disclosure Number: IPCOM000098657D
Original Publication Date: 1959-Aug-01
Included in the Prior Art Database: 2005-Mar-08
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Schwartz, RS: AUTHOR

Abstract

A P-type skin is first diffused on an N-type starting wafer, the latter forming the collector region. Then a double-doped alloy dot is placed on the P-type skin and the assembly is raised to an elevated temperature. The doping materials in the alloy dot are selected so that: (1) The segregation coefficient of the N-type impurity is higher than that of the P-type impurity. (2) The surface concentration of the P-type impurity at the alloy interface is higher than that of the N-type impurity.

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Alloy Diffusion NPN Drift Transistor

A P-type skin is first diffused on an N-type starting wafer, the latter forming the collector region. Then a double-doped alloy dot is placed on the P-type skin and the assembly is raised to an elevated temperature. The doping materials in the alloy dot are selected so that: (1) The segregation coefficient of the N-type impurity is

higher than that of the P-type impurity.

(2) The surface concentration of the P-type impurity at the

alloy interface is higher than that of the N-type impurity.

Either antimony or arsenic is proposed as the donor impurity in the dot while either indium or zinc is the possible acceptor impurity. A diffused P-type base region is formed at the alloy emitter interface.

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