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Memory Selection Scheme

IP.com Disclosure Number: IPCOM000098709D
Original Publication Date: 1959-Oct-01
Included in the Prior Art Database: 2005-Mar-08
Document File: 2 page(s) / 30K

Publishing Venue

IBM

Related People

Cole, JN: AUTHOR [+2]

Abstract

A memory matrix made up of a plurality of bistable magnetic cores having the attributes of coincident selection techniques without the necessity of coupling the cores with two selection lines is achieved in accordance with the structure illustrated.

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Memory Selection Scheme

A memory matrix made up of a plurality of bistable magnetic cores having the attributes of coincident selection techniques without the necessity of coupling the cores with two selection lines is achieved in accordance with the structure illustrated.

Specifically, a three dimensional memory matrix is constructed by providing a plurality of X and Y selection lines arranged in columns and rows. Each X selection line is connected to one end of a plurality of conductors in which each conductor couples a desired number of cores to make up a word. Each Y selection line is connected to the other end of a plurality of the conductors such that for a given X and Y selection line a single conductor is common to both. A desired X selection line is energized and by means of a suitable switch connected with each Y selection line a particular conductor coupling the desired cores is energized.

A typical selection is shown above with the current path illustrated by the solid arrow. In such a structure, a sneak circuit is possible as noted by the dashed arrows. In order to avoid such sneak paths a suitable non-linear element having a threshold, such as thyrite, is serially connected in each conductor line. By employing multipath core structures, the signal, sense and inhibit lines may thread different apertures, therefore simplifying fabrication techniques.

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