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Magnetic Memory Device

IP.com Disclosure Number: IPCOM000098712D
Original Publication Date: 1959-Oct-01
Included in the Prior Art Database: 2005-Mar-08
Document File: 2 page(s) / 39K

Publishing Venue

IBM

Related People

Melan, EH: AUTHOR

Abstract

It has been found that small air gaps may be introduced in magnetic memory cores without serious reduction of the memory characteristic. This fact may be utilized to produce a memory element having nondestructive read characteristics by providing a conventional memory core with an air gap in which a wafer of magnetically responsive material is placed. Tests, of a sort depending upon the kind of response of the material, may be made to determine the magnitude or direction of the flux in the core without affecting its magnetic condition.

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Magnetic Memory Device

It has been found that small air gaps may be introduced in magnetic memory cores without serious reduction of the memory characteristic. This fact may be utilized to produce a memory element having nondestructive read characteristics by providing a conventional memory core with an air gap in which a wafer of magnetically responsive material is placed. Tests, of a sort depending upon the kind of response of the material, may be made to determine the magnitude or direction of the flux in the core without affecting its magnetic condition.

The drawing shows a two dimensional array of non-destructive read memory elements each of which comprises a memory core and a wafer of Hall effect material. The state of flux in a core is determined by passing current through the electrodes R and sensing the polarity of the voltage in electrodes S. Due to the Hall effect, the polarity of the voltage developed in electrodes S will indicate the direction of flux in the core. Static interrogation of entire words is provided by coupling the electrodes R in series to form column read lines and coupling the electrodes S in series to form row sense lines.

Semiconductor materials exhibiting other kinds of magnetic response, for example magneto resistive materials and photo magneto electro materials, may also be mounted in memory cores to provide non destructive read elements. The specific arrangements for using such devices will depend upon the kind of response of ea...