Browse Prior Art Database

Switching Device

IP.com Disclosure Number: IPCOM000098719D
Original Publication Date: 1959-Oct-01
Included in the Prior Art Database: 2005-Mar-08
Document File: 2 page(s) / 23K

Publishing Venue

IBM

Related People

Anderson, RL: AUTHOR

Abstract

A PNP device can be constructed in which one junction has an established breakdown voltage and the other junction exhibits the N type negative resistance characteristic curve of the Esaki or tunnel diode. The device is fabricated so that the P(1)N junction has a breakdown V(B) and the P(2)N junction exhibits the N type negative resistance of the tunnel diode.

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Switching Device

A PNP device can be constructed in which one junction has an established breakdown voltage and the other junction exhibits the N type negative resistance characteristic curve of the Esaki or tunnel diode. The device is fabricated so that the P(1)N junction has a breakdown V(B) and the P(2)N junction exhibits the N type negative resistance of the tunnel diode.

In such a device a breakdown diode and an Esaki or tunnel diode are contained in series in a single structure. The V-I characteristic of the device is shown in which the N type negative resistance is displaced by V(B).

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