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Browse Prior Art Database

A Storage Device for a Carrier Frequency System

IP.com Disclosure Number: IPCOM000098811D
Original Publication Date: 1959-Dec-01
Included in the Prior Art Database: 2005-Mar-08
Document File: 2 page(s) / 23K

Publishing Venue

IBM

Related People

Shevel, WL: AUTHOR

Abstract

Storage in carrier type systems is attained by utilization of an element made of ceramic material consisting of a barium titanate ferrite, a perovskite, having the empirical formula Ba (Fe(x)T(1-x)) O(3), where x is restricted to a value between 1. 0 and 0.50.

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A Storage Device for a Carrier Frequency System

Storage in carrier type systems is attained by utilization of an element made of ceramic material consisting of a barium titanate ferrite, a perovskite, having the empirical formula Ba (Fe(x)T(1-x)) O(3), where x is restricted to a value between
1. 0 and 0.50.

When an element 10, comprising the ceramic material described above and packaged to a thickness of 25 mils intermediate two gold electrodes 1/4" in diameter, is subjected to an a.c. carrier voltage of 100v., a hysteresis characteristic is observed having a width of approximately 10-20 volts. The hysteresis width is variable with the ceramic composition employed and temperature. The device, however, is capable of operating in the 200 Kc frequency range. An advantage of such an element is that here non linearity or reactive effects need not be relied upon to achieve the type hysteresis illustrated and further, the state of the material is capable of being changed within one cycle of the carrier frequency by applying a pulse only a few volts in excess of the threshold value to achieve a transition period within the range of 20 micro seconds.

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