Browse Prior Art Database

Storage Device Using Phosphors

IP.com Disclosure Number: IPCOM000098852D
Original Publication Date: 1958-Jun-01
Included in the Prior Art Database: 2005-Mar-08
Document File: 2 page(s) / 32K

Publishing Venue

IBM

Related People

Keller, SP: AUTHOR

Abstract

The basic idea relates to a memory storage device and to a concomitant scheme for sensing the readout. The memory element is prepared by depositing strips of electrode material onto a backing, depositing a layer of photoconductive material (CdS: Cu, Ga) thereon, placing a transparent plate having strips of electrodes deposited over the photoconductive material such that each set of electrodes is either crossed with respect to each other or superimposed, putting a layer of an infrared stimulable phosphor (SrS: Ce, Sm) onto said plate, and placing a mask having discrete openings onto the IR phosphor layer, such that the preceding is an end view.

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Storage Device Using Phosphors

The basic idea relates to a memory storage device and to a concomitant scheme for sensing the readout. The memory element is prepared by depositing strips of electrode material onto a backing, depositing a layer of photoconductive material (CdS: Cu, Ga) thereon, placing a transparent plate having strips of electrodes deposited over the photoconductive material such that each set of electrodes is either crossed with respect to each other or superimposed, putting a layer of an infrared stimulable phosphor (SrS: Ce, Sm) onto said plate, and placing a mask having discrete openings onto the IR phosphor layer, such that the preceding is an end view.

One can read in from the left with appropriate light for a given IR phosphor, usually U. V., through the mask, and read out with an IR beam covering the white surface. Where there has been a stored bit, the photoconductive material will become reactively conductive and the current will flow with an applied emf through the proper electrodes. The flow of current through the proper electrodes can also be used for the sensing of stored information. This device affords a long time storage, of rather high density, and it admits of its own optical sensing.

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