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Reduction of Noise Coupling Between Parallel Conductors

IP.com Disclosure Number: IPCOM000098998D
Original Publication Date: 1967-Nov-01
Included in the Prior Art Database: 2005-Mar-08
Document File: 2 page(s) / 22K

Publishing Venue

IBM

Related People

Herge, RR: AUTHOR [+2]

Abstract

The memory has a bit line 2 and a sense line 3 associated with a thin film magnetic storage element 4. The latter is formed on a support 6. Currents are applied to line 2 and to word line 5 for read and write operations on element 4. Line 3 and line 2 are parallel and are orthogonal to line 5. During a read operation, the magnetization of element 4 is switched to produce a voltage which signifies the data stored in such element. This voltage appears on line 3 and is detected in sensing circuitry.

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Reduction of Noise Coupling Between Parallel Conductors

The memory has a bit line 2 and a sense line 3 associated with a thin film magnetic storage element 4. The latter is formed on a support 6. Currents are applied to line 2 and to word line 5 for read and write operations on element 4. Line 3 and line 2 are parallel and are orthogonal to line 5. During a read operation, the magnetization of element 4 is switched to produce a voltage which signifies the data stored in such element. This voltage appears on line 3 and is detected in sensing circuitry.

The capacitive and inductive coupling between line 2 and line 3 can produce noise on line 3 when line 2 is energized. To minimize this noise, the wires can be arranged to have equal capacitive and inductive coupling. In this arrangement, the noise voltages cancel in the direction of propagation toward the memory sensing circuitry.

Ferrite keeper 7 is provided to enhance the magnetic coupling between element 4 and conductors 2, 3 and 5. To equalize the capacitive and inductive coupling between the bit and sense lines, keeper 7 is located away from support 6 somewhat farther than the spacing that would provide optimum coupling for the wires and element 4. A keeper can be provided advantageously in other applications where the capacitive and inductive coupling can be balanced by increasing the permeability of the space near the conductors.

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