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Phosphors Based on Photonic Band Gap Material Doped with Nanoparticles

IP.com Disclosure Number: IPCOM000099045D
Publication Date: 2005-Mar-10
Document File: 1 page(s) / 11K

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The IP.com Prior Art Database

Abstract

ID299245

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Phosphors Based on Photonic Band Gap Material Doped with Nanoparticles

Photonic lattices offer unique possibilities to adjust the optical properties of single ions or nanocrystalline luminescent materials: the intensity of optical transitions of the emitting species in the photonic lattice can be enhanced by increasing the radiative matrix element of the corresponding transition by coupling of the transition (dipole) moment to photon modes provided by the photonic lattice.

In this way, the intensity of both absorption and emission bands can be increased, compared to the situation in which the emitting species are not incorporated in a photonic lattice.

White light emitting diodes with light with low colour temperature and high lumen efficiency require red luminescent materials with a narrow emission band (10-20 nm) centered around 610-620 nm. This is not easily achieved with luminescent materials based on Eu2+ (emission band too broad) or Eu3+ (weak absorption, no efficient sensitisation scheme known). Other ions fulfilling this requirement have not been identified, although Pr3+ might be a suitable ion.

Surprisingly, the combination of luminescing nanoparticles chosen from the compounds CdS, CdSe, InAs, InP and photonic band gap materials offer a very elegant way to solve this problem. Nanoparticles can be tuned (by size) to generate a relatively narrow emission band at the desired spectral position, whereas the absorption spectrum generally is very broad. In ad...