Browse Prior Art Database

Surface Pretreatment for Enhanced of Titanium Silicide

IP.com Disclosure Number: IPCOM000099124D
Original Publication Date: 1990-Jan-01
Included in the Prior Art Database: 2005-Mar-14
Document File: 1 page(s) / 46K

Publishing Venue

IBM

Related People

Mann, RW: AUTHOR [+3]

Abstract

A method is disclosed for altering the surface of silicide (TiSi2) so that a more effective of the surface material can occur.

This text was extracted from an ASCII text file.
This is the abbreviated version, containing approximately 61% of the total text.

Surface Pretreatment for Enhanced of Titanium Silicide

       A method is disclosed for altering the surface of silicide
(TiSi2) so that a more effective of the surface material can occur.

      By converting TiSi2 through a nitridation process to nitride
(TiN), a surface is formed which is to HF attack, is a diffusion
barrier, a a conductor, etc. However, in order to achieve a amount of
nitridation, high process temperatures previously been required. It
has been shown that the of NH3 rather than N2 can reduce the
temperature of the process [*].  A new method is disclosed whereby
nitridation process is enhanced by a surface This new process has a
number of practical in semiconductor fabrication.

      A specific CMOS application of this process follows:
   1.   Standard processing through contact level of
        develop.
   2.   Reduce total contact etch time by 0.5 to 1.0
        minutes.
   3.   LFE and SIP resist strip.
   4.   New dry oxide etch step (0.5 to 1.0 minute) is
        added. CHF3/O2 or other etch chemistry may also be
        suitable. This process produces a titanium-rich
        surface on exposed silicide.  Si and O
        concentrations are reduced due to the oxide etch.
   5.   Nitridation step utilizing NH3 . Nitridation forms
        an HF- resistant TiN film over TiSi2 . Without
        this process, all TiSi2 in the bottom of contacts
        would...