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Triode Sputtering Apparatus

IP.com Disclosure Number: IPCOM000099159D
Original Publication Date: 1990-Jan-01
Included in the Prior Art Database: 2005-Mar-14
Document File: 3 page(s) / 126K

Publishing Venue

IBM

Related People

Cuomo, JJ: AUTHOR [+3]

Abstract

An improved triode sputtering apparatus is A technique for ion containment, which in broad-beam, ion-source technology, is used to improve ion uniformity at the sputtering target. improved sputtering uniformity obtained with this can be used to make more uniform the sputter etch the target, or, if deposition is the objective, to make uniform the deposit sputtered material on a substrate the target.

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This is the abbreviated version, containing approximately 52% of the total text.

Triode Sputtering Apparatus

       An improved triode sputtering apparatus is  A technique
for ion containment, which in broad-beam, ion-source technology, is
used to improve ion uniformity at the sputtering target. improved
sputtering uniformity obtained with this can be used to make more
uniform the sputter etch the target, or, if deposition is the
objective, to make uniform the deposit sputtered material on a
substrate the target.

      The improved triode structure is shown in the figure.
particular form of discharge chamber shown in the figure called a
multipole configuration triode sputtering 1, due to the plurality of
magnetic pole pieces. attribute of this configuration is that a large
volume 26 near the center of the discharge chamber with magnetic
field strength.  The energetic electrons into this volume have
unrestricted access to all of this volume due to this low magnetic
field  At the normal gas densities for operation, the free paths for
ionizing colli are far larger than chamber dimensions.  With the of
long path lengths and unrestricted access, ionizing electrons have a
nearly uniform ion generation throughout this central region.

      A uniform ion production rate throughout the relatively free
region is not sufficient to produce a uniform density.  A recent
study has also shown, however, that multipole structure can be used
to direct ions away from of the wall 2.  Specifically, the electron
current to anodes 30 across the magnetic field lines 32 serves to
reduce the ion losses to that portion of the boundary.  This electron
current consists initially energetic electrons that have lost much of
energy through collisions with gas atoms or molecules, well as low
energy secondary electrons from ionizing  The magnetic field alone,
without the electron is not sufficient to provide this ion
containment. need for the simultaneous electron current was shown by
anodes.  The ion losses to those boundary with disconnected anodes
increased greatly over the losses to regions with the anodes
connected.

      In summary, a multipole discharge chamber, with the field
concentrated near the outer boundary of the can provide (with
simultaneous  electron current that magnetic field) both uniform ion
production throughout the relatively field-free region and low loss
rates to said boundary.  This combination provides desired uniform
density of ions within the discharge  The of the device can be
understood by to the figure.  In this figure, the general of a triode
sputtering apparatus is combined the multipole treatment of discharge
region boundary, than the boundary of the target and substrate
holder.

      In the figure, the target 2 is bombarded by energetic  The
sputtered material from...