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Browse Prior Art Database

Substrate Metal Deposition

IP.com Disclosure Number: IPCOM000099174D
Original Publication Date: 1990-Jan-01
Included in the Prior Art Database: 2005-Mar-14
Document File: 2 page(s) / 62K

Publishing Venue

IBM

Related People

Casaregola, J: AUTHOR [+4]

Abstract

Disclosed is a system for development of processes technologies for multi-level thin film products. In to meeting current development requirements, the provides extendability to future products, as well as

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This is the abbreviated version, containing approximately 100% of the total text.

Substrate Metal Deposition

       Disclosed is a system for development of processes
technologies for multi-level thin film products.  In to meeting
current development requirements, the provides extendability to
future products, as well as

      The system is designed with two high vacuum chambers 1 2.
Chamber 1 functions as a load/unload, preheat, etch, cooling chamber
whereas chamber 2 is a deposition  Heating is performed with either
front-side 7 or back-side heaters 8 (not shown); both heaters full
control of ramp/soak cycles.  An ion source 5 used for etching.  The
source 5 is fully adjustable for substrate surface preparation.

      The dome 6 is transferred into the deposition chamber 2 a
transfer valve 4 via the transfer mechanism 11. transfer is done
under high vacuum conditions.  The chamber 2 contains two movable
four-pocket beam guns 14, front- and back-side heaters 7 and 8, an
ion source 12, and a source isolation valve  The tool was designed to
accommodate the addition of rings 16 to allow for tool growth
coinciding with in product site.  The components included in the
chamber 2 allow for co-evaporation, ion-assisted
temperature-controlled deposition, and firing of to eight metals from
the center hearth position.

      Extendability to manufacturing is achieved through the of a
flange 9, which would allow the addition of a chamber 3 for dome 6
cooling.  Throughput of the would then be significantly increased.