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Ridge Structure for GRINSCH Laser

IP.com Disclosure Number: IPCOM000099184D
Original Publication Date: 1990-Jan-01
Included in the Prior Art Database: 2005-Mar-14
Document File: 1 page(s) / 32K

Publishing Venue

IBM

Related People

Hoh, PD: AUTHOR [+3]

Abstract

Current AlGaAs/GaAs MQW GRINSCH ridge laser are fabricated with a wet chemical etch for ridge The resulting ridge structure typically has a sharp edge profile which causes problems when metal evaporated to form the electrical contacts to the laser. sharp edge profile of the ridge combined with its height (about 1.5 mm) causes incomplete coverage of metal which leads to open circuits and high current failures. By the addition of two processing steps these problems are

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Ridge Structure for GRINSCH Laser

       Current AlGaAs/GaAs MQW GRINSCH ridge laser are fabricated
with a wet chemical etch for ridge  The resulting ridge structure
typically has a sharp edge profile which causes problems when metal
evaporated to form the electrical contacts to the laser. sharp edge
profile of the ridge combined with its height (about 1.5 mm) causes
incomplete coverage of metal which leads to open circuits and high
current failures.  By the addition of two processing steps these
problems are

      Fig. 1A shows the etched ridge profile. Depositing a coating of
an insulator (i.e., SiO2 or SiNx) by enhanced chemical vapor
deposition (PECVD) and removing this layer using reactive ion (RIE),
sidewalls (SW1, SW2) of this insulator remain the edges of the ridge
(Fig. 1B). These sidewalls soften sharp profile of the ridge allowing
for complete by the subsequent metal deposition and eliminate
electrical failures mentioned above (Fig. 1C).