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Optimal Growth Technique and for Strain Relaxation of Si-Ge on Si Substrates

IP.com Disclosure Number: IPCOM000099268D
Original Publication Date: 1990-Jan-01
Included in the Prior Art Database: 2005-Mar-14
Document File: 2 page(s) / 88K

Publishing Venue

IBM

Related People

Iyer, SS: AUTHOR [+3]

Abstract

The capability of growing strained-layers of Si-Ge Si substrates by molecular beam epitaxy (MBE) has led to novel device structures. In particular, the bandgap achieved through Si-Ge heterostructures has demonstrated by MBE-grown heterojunction bipolar and bipolar inversion channel field-effect The growth sequences used to tailor these can be considered under one broad classification. category can be described as follows: the smaller material (Si-Ge) is grown on top of the larger material (Si). However, there are many applications the reverse or inverted sequence may be desirable. growth of resonant tunnelling structures is one such The difficulty in the development of the structures, however, is that high-quality Si-Ge are impossible to obtain.

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Optimal Growth Technique and for Strain Relaxation of Si-Ge on Si Substrates

       The capability of growing strained-layers of Si-Ge Si
substrates by molecular beam epitaxy (MBE) has led to novel device
structures.  In particular, the bandgap achieved through Si-Ge
heterostructures has demonstrated by MBE-grown heterojunction bipolar
and bipolar inversion channel field-effect  The growth sequences used
to tailor these can be considered under one broad classification.
category can be described as follows: the smaller material (Si-Ge) is
grown on top of the larger material (Si).  However, there are many
applications the reverse or inverted sequence may be desirable.
growth of resonant tunnelling structures is one such  The difficulty
in the development of the structures, however, is that high-quality
Si-Ge are impossible to obtain.  In this article, we a method to
achieve high-quality Si-Ge substrates for "inverted" structures.  The
technique involves an epitaxial Si(x)Ge(1-x) layer on a Si(100) and
then following that with a multilayer to minimize disloca
propagation.  This can be referred to as the transition  The purpose
of the transition layer is to change the constant of the initial
substrate (Si) to that of new substrate (SiGe) with the following
constraints: (1) strain in the layer should be fully relieved, and
(2) total transition layer thickness should be minimized.

      The problems associated with growing a fully relaxed of Si-Ge
by MBE are well documented.  It is known that temperature growth in
this system leads to islanding of epitaxial layer.  This causes a
poor surface mo...