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Emitter Passivation Film

IP.com Disclosure Number: IPCOM000099277D
Original Publication Date: 1990-Jan-01
Included in the Prior Art Database: 2005-Mar-14
Document File: 2 page(s) / 59K

Publishing Venue

IBM

Related People

Bhattacharya, SS: AUTHOR [+2]

Abstract

It is proposed to apply a temporary film of over the emitter in a semiconductor device prior the forming of PtSi on the other contacts in the This serves to protect the emitter from which may otherwise occur during the Pt step in the manufacturing process.

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Emitter Passivation Film

       It is proposed to apply a temporary film of over the
emitter in a semiconductor device prior the forming of PtSi on the
other contacts in the  This serves to protect the emitter from which
may otherwise occur during the Pt step in the manufacturing process.

      One type of transistor includes a polysilicon emitter 1 1).  As
platinum is deposited in subsequent processing emitter degradation
occurs when PtSi is formed on the  This manifests itself in a
decrease in breakdown and/or increase in leakage current.  The
proposal for the deposition of a passivation film 2 (Fig. 2) the
complete transistor structure 3.

      The proposed film is deposited before the Pt process and must
be able to withstand the Pt preclean and defect-free.  It must also
be easily removable so as not degrade the Schottky contacts either by
reactive ion etch damage or undercutting due to wet etching.  The
film consists of a plasma-enhanced chemical deposition (PECVD) oxide
and nitride which is applied the complete structure (Fig. 1).  An RIE
is performed to the base 6 and collector 7 contacts which are to have
formed upon them.  After Pt deposition the passivation is removed and
the final structure is realized (Fig.