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Browse Prior Art Database

Magnetic Flux Return Path for Vertical Recording

IP.com Disclosure Number: IPCOM000099279D
Original Publication Date: 1990-Jan-01
Included in the Prior Art Database: 2005-Mar-14
Document File: 2 page(s) / 62K

Publishing Venue

IBM

Related People

Watanuki, O: AUTHOR

Abstract

Disclosed are structures of magnetic flux return for the high density vertical recording system in [1]. In this type of recording system, it is that 1) a high and sharp field be emanated from the of the tip and 2) the tip-to-medium spacing be by the tunneling current. Therefore, the circuit for tunneling current and the magnetic for flux must be separated. In this disclosure two of flux return path are described.

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This is the abbreviated version, containing approximately 76% of the total text.

Magnetic Flux Return Path for Vertical Recording

       Disclosed are structures of magnetic flux return for the
high density vertical recording system in [1]. In this type of
recording system, it is that 1) a high and sharp field be emanated
from the of the tip and 2) the tip-to-medium spacing be by the
tunneling current. Therefore, the circuit for tunneling current and
the magnetic for flux must be separated. In this disclosure two of
flux return path are described.

      The first type of structure is such that the magnetic and the
highly permeable return path are separated with insulator, as shown
in Fig. 1. The thickness of the layer is up to a few microns, which
sufficiently the electrical current and still allows the flux to go
through the return path.

      The second type of the flux return path has such that the
electrical current and the flux are by a chip of a certain material
such as ferrite has high permeability and very high resistivity, as
in Fig. 2. In this case, the thickness of the ***** ORIGINAL DOCUMENT
***** ferrite chip is 10 microns or This structure is also combined
with the structure of 1.

      In both types of structures, it is required that the path be
flexible and have high permeability. For this permalloy (NiFe)
ribbons or wires, amorphous metal (CoFeSiB) [2], etc.  can be used.
SiO2, Al2O3 etc. used for the material of the insulation layer.

      By using the proposed structures, the paths for magnetic and
the tunnel...