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Reactive Frit for MLC

IP.com Disclosure Number: IPCOM000099304D
Original Publication Date: 1990-Jan-01
Included in the Prior Art Database: 2005-Mar-14
Document File: 2 page(s) / 35K

Publishing Venue

IBM

Related People

Binder, W: AUTHOR [+3]

Abstract

The MLC (multilayer ceramic) frit described here the fired X-Y shrinkage of an MLC substrate. stabilization results from the discovery of a maximum the shrinkage-composition relationship, as shown in the The benefits derived from taking advantage of this selecting a composition range about the maximum are below: 1. The nominal shrinkage of the substrate will be increased from the current low level, thereby minimizing yield losses. 2. Increase the fired density to a maximum. 3. Improve the position of the sintering plateau. 4. Minimize the effects of sintering variables on the shrinkage of improved stability and consistency. The composition for this reactive frit is shown below: Weight Percent Reactive Frit SiO2 50.0 + 2.

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Reactive Frit for MLC

       The MLC (multilayer ceramic) frit described here the fired
X-Y shrinkage of an MLC substrate. stabilization results from the
discovery of a maximum the shrinkage-composition relationship, as
shown in the  The benefits derived from taking advantage of this
selecting a composition range about the maximum are below:
1. The nominal shrinkage of the substrate will be
   increased from the current low level, thereby
   minimizing yield losses.
2. Increase the fired density to a maximum.
3. Improve the position of the sintering plateau.
4. Minimize the effects of sintering variables on the
   shrinkage of improved stability and consistency.
 The composition for this reactive frit is shown below:
                     Weight Percent
                                        Reactive Frit
        SiO2                            50.0 + 2.5
        A12O3                           30.0 + 2.0
        MgO                             11.5 + 1.5
        CaO                              8.0 + 1.5
        Total MgO + CaO                 19.5 + 2.0
        Total SiO2 + A12O3              80.0 + 2.0
        Impurities                       0.5 max.
 PROPERTIES
        TCE (0-300oC) (...