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Improved Planarization, Silicon Dioxide Insulation And Adjustable Insulation Etch Rate by Using Siloxane

IP.com Disclosure Number: IPCOM000099339D
Original Publication Date: 1990-Jan-01
Included in the Prior Art Database: 2005-Mar-14
Document File: 2 page(s) / 68K

Publishing Venue

IBM

Related People

Cronin, JE: AUTHOR [+4]

Abstract

Siloxane in methanol (MEOH), when applied properly to the surface of an integrated circuit having non-planar topology, provides a nearly planar surface. Heat treatment converts the siloxane to silicon dioxide (SiO2), with typical electrical and physical properties. Reactive ion etch rate of this SiO2 material and the ratio of etch rate of the SiO2 to etch rate of reflowable glass, nitrides, and polyimide is adjustable by varying the percentage of carbon tetrafluoride to oxygen (CF4/O2) in the etch gas. Thus, siloxane finds application as an improved substitute for 1) other planarizing materials, e.g., photoresist, and 2) other spun on insulators, e.g., polyimide.

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Improved Planarization, Silicon Dioxide Insulation And Adjustable Insulation Etch Rate by Using Siloxane

       Siloxane in methanol (MEOH), when applied properly to the
surface of an integrated circuit having non-planar topology, provides
a nearly planar surface.  Heat treatment converts the siloxane to
silicon dioxide (SiO2), with typical electrical and physical
properties.  Reactive ion etch rate of this SiO2 material and the
ratio of etch rate of the SiO2 to etch rate of reflowable glass,
nitrides, and polyimide is adjustable by varying the percentage of
carbon tetrafluoride to oxygen (CF4/O2) in the etch gas.  Thus,
siloxane finds application as an improved substitute for 1) other
planarizing materials, e.g., photoresist, and 2) other spun on
insulators, e.g., polyimide.

      Thickness of an SiO2 film created by applying siloxane mixed
with MEOH having 10% water, spinning, drying, and heat treating may
be controlled to be in the range of a monolayer to two microns by
varying the siloxane concentration from 0.1% to 35%.  Proper
application includes puddling the mixture onto an integrated circuit
wafer which is at rest, waiting an appropriate amount of time for
complete wetting, leveling, with some evaporation of MEOH, then
spinning to remove the remaining liquid.  Proper heat treatment
includes keeping the temperature of initial air drying under 100
degrees Celsius, then performing the final cure in nitrogen while
ramping the temperature up to 350 degree...