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Method of Increasing the Breakdown Field Strength

IP.com Disclosure Number: IPCOM000099495D
Original Publication Date: 1990-Jan-01
Included in the Prior Art Database: 2005-Mar-15
Document File: 1 page(s) / 27K

Publishing Venue

IBM

Related People

Euen, W: AUTHOR [+3]

Abstract

The breakdown field strength of very thin thermal oxide (/ 5 nm) is increased by annealing after deposition of an Al electrode. Annealing is carried out in forming gas at 400oC. The result depends on the annealing time (see the figure). Simultaneously, the defect density of the MOS structure is reduced.

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Method of Increasing the Breakdown Field Strength

       The breakdown field strength of very thin thermal oxide (/
5 nm) is increased by annealing after deposition of an Al electrode.
Annealing is carried out in forming gas at 400oC.  The result depends
on the annealing time (see the figure).  Simultaneously, the defect
density of the MOS structure is reduced.