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Method of Increasing the Breakdown Voltage of 5 Nm-thick Gate Oxide

IP.com Disclosure Number: IPCOM000099497D
Original Publication Date: 1990-Jan-01
Included in the Prior Art Database: 2005-Mar-15
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Euen, W: AUTHOR [+3]

Abstract

To increase the breakdown voltage of thermally grown 5 nm thick gate oxide, 1016 Si ions/cm2 are implanted at an energy of 100 kV, followed by annealing at 850oC in N2 for 10 minutes.

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Method of Increasing the Breakdown Voltage of 5 Nm-thick Gate Oxide

       To increase the breakdown voltage of thermally grown 5 nm
thick gate oxide, 1016 Si ions/cm2 are implanted at an energy of 100
kV, followed by annealing at 850oC in N2 for 10 minutes.