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Method of Reducing the Stationary Charge of Ultrathin Thermal Oxides

IP.com Disclosure Number: IPCOM000099499D
Original Publication Date: 1990-Jan-01
Included in the Prior Art Database: 2005-Mar-15
Document File: 1 page(s) / 12K

Publishing Venue

IBM

Related People

Euen, W: AUTHOR [+3]

Abstract

The stationary charge of ultrathin thermal oxides is reduced by annealing at 1200oC in argon for 20 minutes. A flatband voltage of about -0.71 V and a breakdown field strength of about 11.8 MV/cm are achieved.

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Method of Reducing the Stationary Charge of Ultrathin Thermal Oxides

       The stationary charge of ultrathin thermal oxides is
reduced by annealing at 1200oC in argon for 20 minutes.  A flatband
voltage of about -0.71 V and a breakdown field strength of about 11.8
MV/cm are achieved.