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Lift-off Process On a Single Wafer Reactive Ion Etching Tool

IP.com Disclosure Number: IPCOM000099505D
Original Publication Date: 1990-Jan-01
Included in the Prior Art Database: 2005-Mar-15
Document File: 1 page(s) / 45K

Publishing Venue

IBM

Related People

Le Roy, JM: AUTHOR

Abstract

It is often desired to etch a multi-layer resist (MLR) structure using a silylated resist mask, in particular when this structure is to be used for lift-off metallization. Then a specific etch profile is required to ensure adequate mechanical strength to the resist pedestals after etching and prevent them from shifting during buffered HF dip- clean.

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Lift-off Process On a Single Wafer Reactive Ion Etching Tool

       It is often desired to etch a multi-layer resist (MLR)
structure using a silylated resist mask, in particular when this
structure is to be used for lift-off metallization. Then a specific
etch profile is required to ensure adequate mechanical strength to
the resist pedestals after etching and prevent them from shifting
during buffered HF dip- clean.

      For the experiments presented in this article, a single wafer
RIE tool model 900 (manufactured by the Tegal Corporation, USA) of
the diode reactor type was used. The chamber consists of
independently water-cooled upper and lower electrodes which are set
at a 38 mm gap.  In this configuration, the wafer rests on the radio
frequency (13.56 MHz) powered electrode. It results high etch rates
and anisotropic etching. The ratio between the two electrode areas is
very important, and the power density is higher (> 1W/cm2).

      First experiments were done on resist-coated wafers to
determine the uniformity, the etch rate and subsequently to evaluate
the pattern factor effect on the product wafers. The parameters were
as follows:
    Pressure   :  500 mTorrs
    Flow (02)  :   80 SCCM
    Power      :  200 Watts
    DC Bias    : -250 VDC
    The results that were obtained are given below:
    Etch rate      : 9000 Ao/minute
    Uniformity     :  10% (at 3 Sigma)
    Pattern factor :  15%
    To f...