Browse Prior Art Database

Room Temperature Electrical Protection of Microcircuits Designed for Operation at Lower Temperatures

IP.com Disclosure Number: IPCOM000099528D
Original Publication Date: 1990-Jan-01
Included in the Prior Art Database: 2005-Mar-15
Document File: 1 page(s) / 54K

Publishing Venue

IBM

Related People

Bumble, B: AUTHOR [+3]

Abstract

Disclosed is a method to protect microcircuits (that are intended for normal operation at lower temperatures) from electrical transients at room temperature. Without any additional steps this procedure can also help to fabricate on-chip temperature sensors to monitor local temperatures on the chip.

This text was extracted from an ASCII text file.
This is the abbreviated version, containing approximately 57% of the total text.

Room Temperature Electrical Protection of Microcircuits Designed for Operation at Lower Temperatures

       Disclosed is a method to protect microcircuits (that are
intended for normal operation at lower temperatures) from electrical
transients at room temperature.  Without any additional steps this
procedure can also help to fabricate on-chip temperature sensors to
monitor local temperatures on the chip.

      A common problem in the measurement and operation of
microcircuits is their sensitivity to external electrical transients
and electrostatic build-up.  It is desirable that they remain
electrically shorted by a protective circuitry until they have to be
used.  Recent attempts to increase the speed of a chip have involved
operating at lower (liquid nitrogen, 77oK) temperatures.  In these
cases where microcircuits have to be operated at low temperatures
this method achieves electrical protection.

      The method involves the use of a metal that can be easily
deposited as an insulator layer between the wires that carry the
signals to the various devices and the ground plane.  This material
should also have a large increase in resistivity as it is cooled from
room temperature to liquid nitrogen temperature (77oK).

      At room temperature, the resistivity of the material forming
the insulating layer is relatively low (approximately 10
KiloOhms-cm).  Due to the large area of the insulating layer (larger
than 0.01 square mm.)  and its small thic...