Dismiss
InnovationQ will be updated on Sunday, Oct. 22, from 10am ET - noon. You may experience brief service interruptions during that time.
Browse Prior Art Database

Lift-Off Pattern Compensation As a Planarization Aid

IP.com Disclosure Number: IPCOM000099783D
Original Publication Date: 1990-Feb-01
Included in the Prior Art Database: 2005-Mar-15
Document File: 2 page(s) / 43K

Publishing Venue

IBM

Related People

Abernathy, JR: AUTHOR

Abstract

When using chemical-mechanical polishing (CMP) for planarization, excessive thickness of conformal leveling material is normally deposited and removed to avoid dishing in large low regions in topology of an integrated circuit. By using a lift-off process to fill the large low regions before conformally depositing the leveling material, dishing is avoided without excessive deposition and removal processing.

This text was extracted from an ASCII text file.
This is the abbreviated version, containing approximately 100% of the total text.

Lift-Off Pattern Compensation As a Planarization Aid

       When using chemical-mechanical polishing (CMP) for
planarization, excessive thickness of conformal leveling material is
normally deposited and removed to avoid dishing in large low regions
in topology of an integrated circuit. By using a lift-off process to
fill the large low regions before conformally depositing the leveling
material, dishing is avoided without excessive deposition and removal
processing.

      Referring to Fig. 1, the topology of an integrated circuit 10
includes small low regions in area A and a large low area B.  A lift-
off process is first used to deposit a fill material 12 having a
thickness D in area B.

      As shown in Fig. 2, leveling material 14 is conformally
deposited over the topology.

      CMP is then used to planarize the surface, resulting in the
cross section shown in Fig. 3.