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Device for Thickness Uniformity Control in Sputtering Systems

IP.com Disclosure Number: IPCOM000099896D
Original Publication Date: 1990-Feb-01
Included in the Prior Art Database: 2005-Mar-15
Document File: 2 page(s) / 68K

Publishing Venue

IBM

Related People

Cistola, AB: AUTHOR [+3]

Abstract

The control of film thickness is one of the most important aspects in the development of cermet-type resistors on substrates. Film thickness control of sputter-deposited film which provides as narrow a range as possible is mandatory for acceptable yield.

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Device for Thickness Uniformity Control in Sputtering Systems

       The control of film thickness is one of the most
important aspects in the development of cermet-type resistors on
substrates.  Film thickness control of sputter-deposited film which
provides as narrow a range as possible is mandatory for acceptable
yield.

      Generally, sputter systems as received from vendors do not
provide optimum film thickness control.  For example, the thickness
distribution plots in Fig. 1 show a "U"-shaped curve for a particular
sputtering system as manufactured. This characteristic reduces the
actual yield up to 30%, which is intolerable.  It is desired to have
the curve as flat as possible.  The device described here has been
able to reduce the thickness range and, moreover, is able to reverse
the shape of the curve.  This device can be attached to most
sputtering system anodes and used for improving film thickness
control for diode mode sputtering.  It is called the "Modified
Anode".

      The Modified Anode 1 uses springs 2 installed on the
rectangular frame 3 anode, as shown in Fig. 2.  The springs 2 should
be installed at critical locations within the anode.  Their tension
and position can be altered to induce more plasma uniformity and,
consequently, improved thickness uniformity.  Springs 2 are
positioned between rows of the parts carrier to minimize shadowing
effects.

      In one set of experiments, stretched and normal springs were
compared....