Browse Prior Art Database

Lithographic Patterns With a Barrier Liner

IP.com Disclosure Number: IPCOM000100163D
Original Publication Date: 1990-Mar-01
Included in the Prior Art Database: 2005-Mar-15
Document File: 2 page(s) / 54K

Publishing Venue

IBM

Related People

Guthrie, W: AUTHOR [+2]

Abstract

Processing and insulating materials are used which provide a polish stop and a barrier to migration of copper into polyimide at surfaces and via hole sidewalls.

This text was extracted from an ASCII text file.
This is the abbreviated version, containing approximately 77% of the total text.

Lithographic Patterns With a Barrier Liner

       Processing and insulating materials are used which
provide a polish stop and a barrier to migration of copper into
polyimide at surfaces and via hole sidewalls.

      Referring to Fig. 1, a first layer of polyimide 10 is applied
and cured on substrate 12 and coated with an etch stop, barrier layer
material 14, e.g., SiBN, SiON, or SiN, which is also resistant to
oxygen reactive ion etching (RIE).  A second polyimide layer 16 is
then applied and cured and coated with a layer 18 of the same etch
stop material. Then, by means of a grey level mask and a single layer
of photoresist, or by means of two photoresist layers (the first
layer hardened) and two masking steps, contact holes are opened
through layers 14 and 10 to contacts on substrate 12 and metal line
patterns are defined by openings to etch stop layer 14.  Next,
barrier layer 20 of the same material as layers 14 and 18 is
conformally deposited.  RIE removal of layer 20 leaves the structure
shown in Fig. 2. Filling and planarizing the structure of Fig. 2 with
a copper or Al/Cu metallurgy completes the creation of lines and stud
contacts.  The lines and stud contacts are everywhere contained
within the barrier material and thus prevented from direct contact
with, and diffusion into, polyimide.

      Diamond-like carbon (DLC) films are good barriers to copper
diffusion but are etched by oxygen RIE.  DLC films may be conformally
deposited by means such a...