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Browse Prior Art Database

Process for Producing a Decoupling Capacitor On a Silicon Carrier

IP.com Disclosure Number: IPCOM000100203D
Original Publication Date: 1990-Mar-01
Included in the Prior Art Database: 2005-Mar-15
Document File: 2 page(s) / 59K

Publishing Venue

IBM

Related People

Euen, W: AUTHOR [+3]

Abstract

Disclosed is an integrated circuit package comprising at one active integrated circuit mounted on and electrically connected to a power supply distribution wiring and a chip interconnection and signal wiring formed on the top surface of a passive silicion carrier in which a power supply capacitor is implemented.

This text was extracted from an ASCII text file.
This is the abbreviated version, containing approximately 79% of the total text.

Process for Producing a Decoupling Capacitor On a Silicon Carrier

       Disclosed is an integrated circuit package comprising at
one active integrated circuit mounted on and electrically connected
to a power supply distribution wiring and a chip interconnection and
signal wiring formed on the top surface of a passive silicion carrier
in which a power supply capacitor is implemented.

      For producing a decoupling capacitor on a PSC (passive silicion
carrier), a special layer sequence is selected, namely, silicon
(substrate) / titanium silicide / CVD oxide / nitride / Al.

      A capacitance defined by this special layer sequence is
independent of the bias, the magnitude of the applied voltage and the
doping of the Si substrate.

      The proposed process permits diodes and decoupling capacitor
being produced simultaneously.  The diodes thus produced may be used
to test the multilayer wiring for defects.

      The process sequence is described in the figure.  For normal
operation, the metal conductors are assumed to be positively biased
(VH>=OV) relative to the substrate.  (The test diodes are blocked
during normal operation, as their n-doped side is connected to the
conductors.)  If the required normal operation is such that the
conductors are negatively (<=0V) biased relative to the substrate,
the process can be readily changed.  In such a case, an n-doped
(instead of a p-doped) substrate would be required, and the diode
would be produced b...